Schritte Plus 1 Kursbuch Arbeitsbuch Pdf Download _TOP_
Schritte Plus 1 Kursbuch Arbeitsbuch Pdf Download _TOP_
Schritte Plus 1 Kursbuch Arbeitsbuch Pdf Download
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The book has 4 pages added which may have been removed in the typesetting process.1. Field of the Invention The present invention relates to a method of making a semiconductor diode device for producing a pn diode element used for a light-emitting diode and the like, for example. 2. Description of the Prior Art As a method of making a light-emitting diode of the above-mentioned kind, there is a method for preparing a p-n junction in semiconductor material by a thermal diffusion method and the like, for example, and then, applying an Au diffusion layer to the p-n junction portion and forming a light-emitting region by injection of current into the thus applied Au diffusion layer. The method is an effective method for mass production since it is possible to produce a light-emitting diode with high efficiency. However, this method is disadvantageous in terms of cost since, among the disadvantages, a very complicated and time-consuming process is required for junction formation and film deposition. On the other hand, there are diode devices and semiconductor diode devices each obtained by carrying out various modifications on the conventional method for making a p-n junction as described above. By way of example, there are a reverse-impurity doped (RID) type light-emitting diode, a hetero-barrier junction diode (HBJD) type light-emitting diode and so forth. The RID-type light-emitting diode is constructed in such a manner that, after a pn junction is formed by an ion implantation in the reverse manner, a metal such as Al is diffused thereinto. The HBJD type light-emitting diode is so constructed that a compound of a p-type semiconductor material and an n-type semiconductor material with reverse polarity is employed as a pn junction, and a metal such as Au is diffused thereinto. In the meantime, as a method of making a pn diode device of the above-mentioned kind, there is a method in which after a p-type Al.sub.x Ga.sub.1-x As layer and an n-type Al.sub.x Ga.sub.1-x As layer are epitaxially grown on a GaAs substrate in the reverse-arrowed, baxes direction, an Au diffusion layer or the like is formed on the thus grown p-type Al 7abca1508a
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