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SERIAL NUMBERS SERIAL NUMBERS IF SERIAL NUMBER OF DEEP FREEZEEEE EEEEEEEEEE IS ANY TYP OF SHIFT OF 33 OR 34 OR 43 OR 44 OR 50 OR 51 OR 52 OR 53 OR 54 OR 55 OR 56 OR 57 OR 58 OR 59 OR 61 OF THE 70 THEN NUMBER OF SERIAL NO CAN SHOW THEThe present invention relates to a semiconductor device and a manufacturing method thereof. In particular, the invention relates to a semiconductor device including a barrier film and a manufacturing method thereof. The semiconductor device includes a silicon oxide film that is formed as an upper portion of a gate electrode of the MOS field effect transistor, and a titanium nitride film. The titanium nitride film is a barrier film, and plays a role for, e.g., preventing the titanium film of the upper portion of the gate electrode from reacting with the silicon oxide film. As a result of recent improvements in the level of miniaturization of the semiconductor device, a miniaturized MISFET including the silicon oxide film as a gate insulating film of the transistor has been developed. The miniaturized MISFET is required to have a thin gate insulating film. However, as the thickness of the gate insulating film is made thinner, dielectric breakdown may occur in the gate insulating film. The occurrence of the dielectric breakdown in the gate insulating film may lead to the occurrence of a fatal defect, such as gate current leakage. When the dielectric breakdown occurs in the silicon oxide film, the titanium nitride film is formed on the silicon oxide film. This titanium nitride film is required to have a prescribed thickness to function as a barrier film. The titanium nitride film is formed at a temperature on the order of 400° C. However, when the titanium nitride film is formed at the high temperature, the aforementioned silicon oxide film is thermally degraded. Accordingly, there is a need for a technique that does not degrade the silicon oxide film when the titanium nitride film is formed. Various techniques for forming the titanium nitride film without degrading the silicon oxide film have been disclosed. For example, Japanese Patent Laid-Open No. 2004-275322 discloses a technique in which, at the time of forming a titanium nitride film, after the silicon oxide film is formed on a semiconductor substrate, oxygen plasma treatment is performed to form a titanium oxide film. Then, the titanium oxide

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